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參數(shù)資料
| 型號(hào)： | HN58V1001 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 1M EEPROM (128-kword ×8-bit)(1M EEPROM (128k字 ×8位)) |
| 中文描述： | 100萬(wàn)的EEPROM（128 KWord的× 8位）（1米的EEPROM（128K的字× 8位）） |
| 文件頁(yè)數(shù)： | 23/24頁(yè) |
| 文件大?。?/td> | 181K |
| 代理商： | HN58V1001 |
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HN58V1001 Series
23
Revision Record
Rev.
Date
Contents of Modification
Drawn by
Approved by
0.0
Jul. 11, 1991
Initial issue
K. Furusawa
T. Wada
1.0
Jan. 30, 1992 HN58V1001P/FP/T/R-20 to
HN58V1001P/FP/T/R-25
Low power dissipation
100
μ
W max (standby) to 110
μ
W max (standby)
Pin Description
V
power: +5 V to +3V
Recommended DC Operating Conditions
V
IH
min: 1.9 V to 2.0 V
V
IH
max: V
CC
+1 V to V
CC
+0.3 V
V
min: V
-1 V to V
CC
-0.5 V
DC Characteristics
I
CC3
max: 10 mA to 6 mA
25 mA to 15 mA
I
CC3
test conditions: cycle = 1
μ
s/200 ns to
cycle = 1
μ
s/250 ns at V
CC
= 3.3 V
AC Characteristics
t
ACC
/t
max: 200 ns to 250 ns
t
OE
max: 90 ns to 120 ns
t
DF
max: 70 ns to 50 ns
t
WC
min: 10 ms to 15 ms
t
CS
/t
to t
/t
(
CE
Controlled)
t
DL
min: 300 ns to 750 ns
t
BLC
min: 0.55
μ
s to 1.0
μ
s
t
min: 150 ns to 250 ns
Functional Description
Deletion of Write Protection(2)
Change of Data Protection 2
Software data protection
Address: AAAA to AAAA or 2AAA
Change of Read Timing Waveform
K. Furusawa
T. Wada
2.0
Feb. 20, 1993 Mode Selection
I/O (11-13, 15-19) to I/O (13-15, 17-21)
DC Characteristics
V
min: 2.0 V to 1.9 V
AC Characteristics
t
RR
max: 450 ns to 600 ns
t
min: 0 ns to 10 ns
Deletion of Mode Description
Addition of Reset function
Change of erase/write cycles in page mode: 10
5
to10
4
Change of erase/write cycles in byte mode: 10
4
to10
3
Functional Description
10 ms to 15 ms
K. Furusawa
K. Furusawa
3.0
Apr. 23, 1993 Addition of Toggle Bit
M. Terasawa
K. Furusawa
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58V1001FP-20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58V1001FP-25 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
| HN58V1001FP-25E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:1M EEPROM (128-kword ?? 8-bit) Ready/Busy and RES function |
| HN58V1001P-20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58V1001P-25 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
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