參數(shù)資料
型號: HN58V256AI
廠商: Hitachi,Ltd.
英文描述: 256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k字 ×8位))
中文描述: 256畝的EEPROM(32 KWord的× 8位)(256k的EEPROM(32K的字× 8位))
文件頁數(shù): 1/20頁
文件大?。?/td> 144K
代理商: HN58V256AI
HN58V256AI Series
256k EEPROM (32-kword
×
8-bit)
Wide Temperature Range version
ADE-203-616C (Z)
Rev. 3.0
Oct. 24, 1997
Description
The Hitachi HN58V256A is electrically erasable and programmable ROM organized as 32768-word
×
8-
bit. It has realized high speed low power consumption and high reliability by employing advanced MNOS
memory technology and CMOS process and circuitry technology. They also have a 64-byte page
programming function to make their write operations faster.
Features
Single 3 V supply: 2.7 to 5.5
Access time: 120 ns max
Power dissipation:
Active: 20 mW/MHz, (typ)
Standby: 110
μ
W (max)
On-chip latches: address, data,
CE
,
OE
,
WE
Automatic byte write: 10 ms max
Automatic page write (64 bytes): 10 ms max
Data
polling and Toggle bit
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
10
5
erase/write cycles (in page mode)
10 years data retention
Software data protection
Operating temperature range: –40 to 85
°
C
相關(guān)PDF資料
PDF描述
HN58V256A 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
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HN58V256AT-12 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V257AT-12 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V257A 256k EEPROM (32-kword ×8-bit)(256k EEPROM (32k字 ×8位))
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