參數(shù)資料
型號: HN58V1001
廠商: Hitachi,Ltd.
英文描述: 1M EEPROM (128-kword ×8-bit)(1M EEPROM (128k字 ×8位))
中文描述: 100萬的EEPROM(128 KWord的× 8位)(1米的EEPROM(128K的字× 8位))
文件頁數(shù): 17/24頁
文件大?。?/td> 181K
代理商: HN58V1001
HN58V1001 Series
17
2. Data Protection at V
CC
On/Off
When V
CC
is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may act as
a trigger and turn the EEPROM to program mode by mistake. To prevent this unintentional programming,
the EEPROM must be kept in an unprogrammable state while the CPU is in an unstable state.
Note:
The EEPROM should be kept in unprogrammable state during V
CC
on/off by using CPU RESET
signal.
V
CC
CPU
RESET
Unprogrammable
Unprogrammable
*
*
(1) Protection by
RES
The unprogrammable state can be realized by that the CPU’s reset signal inputs directly to the EEPROM’s
RES
pin.
RES
should be kept V
SS
level during V
CC
on/off.
The EEPROM brakes off programming operation when
RES
becomes low, programming operation doesn’t
finish correctly in case that
RES
falls low during programming operation.
RES
should be kept high for 15
ms after the last data input.
V
CC
RES
WE
or
CE
100
μ
s min
15 ms min
1
μ
s min
Program inhibit
Program inhibit
相關(guān)PDF資料
PDF描述
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HN58V256AFP-12 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V256AT-12 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V257AT-12 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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HN58V1001FP-25 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
HN58V1001FP-25E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:1M EEPROM (128-kword ?? 8-bit) Ready/Busy and RES function
HN58V1001P-20 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM
HN58V1001P-25 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function