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參數(shù)資料
| 型號： | HMPSA94 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 39K |
| 代理商： | HMPSA94 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMPSA94
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6355
Issued Date : 1993.01.15
Revised Date : 2002.04.29
Page No. : 1/4
HMPSA94
HSMC Product Specification
Description
The HMPSA94 is designed for application that requires high voltage.
Features
High Breakdown Voltage: 400V(Min.) at IC=1mA
High Current: IC=300mA at 25
°
C
Complementary to HMPSA44
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature ................................................................................................ +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................................. 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage.................................................................................................. -400 V
VCEO Collector to Emitter Voltage .............................................................................................. -400 V
VEBO Emitter to Base Voltage......................................................................................................... -6 V
IC Collector Current ................................................................................................................. -500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*hFE1
*hFE2
*hFE3
*hFE4
Min.
-400
-400
-6
-
-
-
-
-
-
-
40
50
45
40
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-500
-350
-500
-750
-750
-
300
-
-
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-400V, IE=0
VEB=-4V, IC=0
VCE=-400V, VBE=0
IC=-1mA, IB=-0.1mA
IC=-20mA, IB=-2mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
Classification Of hFE2
Rank
NSS
>
50
70-200
<200mV
NS
>
50
70-300
<500mV
SD
-
N
-
hFE@VCE=-3V, IC=-100mA
hFE2@VCE=-10V, IC=-10mA
VCE(sat)@IC=-20mA, IB=-2mA
70-200
<200mV
50-300
<500mV
TO-92
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