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參數(shù)資料
| 型號： | HPN2369A |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 39K |
| 代理商： | HPN2369A |
HI-SINCERITY
MICROELECTRONICS CORP.
HPN2369A
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6106
Issued Date : 1992.09.22
Revised Date : 2001.09.20
Page No. : 1/4
HPN2369A
HSMC Product Specification
Description
The HPN2369A is designed for general purpose switching and amplifier
applications.
Features
Low Collector Saturation Voltage
High Speed Switching Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature .......................................................................................................... -55 ~ +150
°
C
Junction Temperature .................................................................................................. +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C) .............................................................................................. 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ....................................................................................................... 40 V
VCES Collector to Emitter Voltage..................................................................................................... 40 V
VCEO Collector to Emitter Voltage.................................................................................................... 15 V
VEBO Emitter to Base Voltage ......................................................................................................... 4.5 V
IC Collector Current ..................................................................................................................... 200 mA
ICM Peak Collector Current ......................................................................................................... 300 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCES
BVEBO
IEBO
ICBO
ICES
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
40
40
4.5
-
-
-
-
-
-
-
700
40
30
20
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
400
400
200
250
300
500
850
120
-
-
-
4
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
Test Conditions
IC=10uA, IE=0
IC=10uA, VBE=0
IE=10uA, IC=0
VEB=4V, IC=0
VCB=20V, IE=0
VCE=40V, VBE=0
IC=10mA, IB=1mA
IC=30mA, IB=3mA
IC=10mA, IB=10mA
IC=100mA, IB=10mA
IC=10mA, IB=1mA
IC=10mA, VCE=0.35V
IC=30mA, VCE=0.4V
IC=100mA, VCE=1V
IC=10mA, VCE=10V, f=100MHz
VCB=5V, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
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