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參數(shù)資料
| 型號(hào)： | HMX1225 |
| 廠商： | HSMC CORP. |
| 英文描述： | 0.8A 300/380 VOLTAGE SCRS IGT<200uA |
| 中文描述： | 0.8A三百八分之三百電壓沙特遙感糖耐量低減“200uA |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 22K |
| 代理商： | HMX1225 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMX1225
HMM1225
0.8A 300/380 VOLTAGE SCRS IGT<200uA
Description
The HMX1225/HMM1225 series silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts are intended for
low cost high volume applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Spec. No. : Preliminary Data
Issued Date : 2000.07.01
Revised Date : 2001.09.06
Page No. : 1/2
HMX1225 & HMM1225
HSMC Product Specification
Parameter
Part No.
HMX1225
HMM1225
Symbol
VDRM
VDRM
IT(rms)
IT(AV)
VGRM
IGM
PG(AV)
Tj
Tstg
Tsld
Min. Max.
380
300
0.8
0.5
8
1
0.1
-40
-40
-
Unit
V
V
A
A
V
A
W
°
C
°
C
°
C
Test Conditions
Tj=40
°
C to 125
°
C
(RGK=1K)
TC=40
°
C
Half Cycle=180
°
,TC=40
°
C
IGR=10uA
10us max
20ms max
Repetitive Peak Off State
Voltage
On-State Current
Average On-State Current
Peak Reverse Gate Voltage
Peak Gate Current
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
-
-
-
-
-
-
-
125
125
250
1.6mm from case 10s max
Classification Of IGT
Rank
HMX1225
HMM1225
A
C
10-23 uA
10-23 uA
17-55 uA
17-55 uA
Electrical Characteristics
(Ta=25
°
C)
Parameter
Symbol
IDRM
IDRM
Min
-
-
-
-
-
-
-
-
-
-
25
30
-
Max Unit
0.1
5
1.4
2.2
0.95
600 Ohm
200
0.8
5
6
-
-
500
Test Conditions
Off-State Leakage Current
Off-State Leakage Current
mA
uA
V
V
V
@VDRM (RGK=1K), Tj=125
°
C
@VDRM (RGK=1K), Tj=25
°
C
at IT=0.4A, Tj=25
°
C
at IT=0.8A, Tj=25
°
C
Tj=125
°
C
Tj=125
°
C
VD=7V
VD=7V
RGK=1K(ohm)
RGK=1K(ohm)
VD=0.67*VDRM(RGK=1K), Tj=125
°
C
IG=10mA,diG/dt=0.1A/us, Tj=125
°
C
IG=10mA,diG/dt=0.1A/us
Tc=85
°
C,VD=0.67*VDRM
VR=35V,IT=IT(AV)
On-State Voltage
VT
On-State Threshold Voltage
On-State Slops Resistance
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
Crtical Rate of Current Rise
Gate Controlled Delay Time
VT(TO)
rT
IGT
VGT
IH
IL
dv/dt
di/dt
tgd
uA
V
mA
mA
V/us
A/us
ns
Commutated Turn-off Time
tg
-
200
us
Thermal Resistance junc.to case
Thermal Resistance junc. to amb
R
θ
jc
R
θ
ja
100
200
-
-
K/W
K/W
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