參數(shù)資料
型號(hào)： HMPS8599
廠商： HSMC CORP.
英文描述： PNP SILICON TRANSISTOR
中文描述： 進(jìn)步黨硅晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 39K
代理商： HMPS8599
HI-SINCERITY
MICROELECTRONICS CORP.
HMPS8599
PNP SILICON TRANSISTOR
Spec. No. : HE6319-B
Issued Date : 1996.07.18
Revised Date : 2000.10.01
Page No. : 1/4
HSMC Product Specification
Description
HMPS8599 is designed for general purpose amplifier applications.
Features
Low Collector-Emitter Saturation Voltage
HMPS8599 is complementary to HMPS8099
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +125
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ....................................................................................... -80 V
VCES Collector to Emitter Voltage..................................................................................... -80 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current...................................................................................................... -500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICEO
*hFE1
*hFE2
*hFE3
*VCE(sat)1
*VCE(sat)2
VBE(on)
fT
Cob
Min.
-80
-80
-5
-
-
-
100
100
75
-
-
-0.6
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-100
300
-
-
-0.4
-0.3
-0.8
-
8
Unit
V
V
V
nA
nA
nA
Test Conditions
IC=-100uA, IE=0
IC=-10mA, IB=0
IE=-10uA, IC=0
VCB=-80V, IE=0
VEB=-4V, IC=0
VCE=-60V, IB=0
IC=-1mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-100mA, VCE=-5V
IC=-100mA, IB=-5mA
IC=-100mA, IB=-10mA
IC=-10mA, VCE=-5V
VCE=-5V, IC=-10mA, f=100MHz
VCB=-5V, IE=0, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
V
V
V
MHz
PF
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