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參數(shù)資料
| 型號(hào)： | HMPS751 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP SILICON TRANSISTOR |
| 中文描述： | 進(jìn)步黨硅晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | HMPS751 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMPS751
PNP SILICON TRANSISTOR
Spec. No. : HE6317-B
Issued Date : 1992.09.09
Revised Date : 2000.10.01
Page No. : 1/4
HSMC Product Specification
Description
Amplifier Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ....................................................................................... -80 V
VCEO Collector to Emitter Voltage.................................................................................... -60 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current............................................................................................................. -2 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Min.
-80
-60
-5
-
-
-
-
-
-
75
75
75
40
75
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.1
-0.1
-0.5
-0.3
-1.2
-1
-
-
-
-
-
Unit
V
V
V
uA
uA
V
V
V
V
Test Conditions
IC=-100uA, IE=0
IC=-10mA, IB=0
IE=-10uA, IE=0
VCB=-80V, IE=0
VEB=-4V, IC=0
IC=-2A, IB=-200mA
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
IC=-1A, VCE=-2V
IC=-50mA, VCE=-2V
IC=-500mA, VCE=-2V
IC=-1A, VCE=-2
IC=-2A, VCE=-2V
VCE=-5V, IC=-50mA, f=100MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
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