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參數(shù)資料
| 型號： | HMPS651 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN SILIOCN TRANSISTOR |
| 中文描述： | npn型SILIOCN晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 39K |
| 代理商： | HMPS651 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMPS651
NPN SILICON TRANSISTOR
Spec. No. : HE6326-B
Issued Date : 1992.09.09
Revised Date : 2000.09.20
Page No. : 1/4
HSMC Product Specification
Description
Amplifier transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ........................................................................................ 80 V
VCEO Collector to Emitter Voltage..................................................................................... 60 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current.............................................................................................................. 2 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Min.
80
60
5
-
-
-
-
-
-
75
75
75
40
75
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
0.5
0.3
1.2
1
-
-
-
-
-
Unit
V
V
V
uA
uA
V
V
V
V
Test Conditions
IC=10mA, IB=0
IC=100uA, IE=0
IE=10uA, IC=0
VCB=80V, IE=0
VEB=4V, IC=0
IC=2A, IB=200mA
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=1A, VCE=2V
IC=50mA, VCE=2V
IC=500mA, VCE=2V
IC=1A, VCE=2V
IC=2A, VCE=2V
IC=50mA, VCE=5V, f=100MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
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