參數(shù)資料
型號： HMJE13009A
廠商： HSMC CORP.
英文描述： 12 AMPERE NPN SILICON POWER TRANSISTOR
中文描述： 12安培NPN硅功率晶體管
文件頁數(shù)： 1/6頁
文件大?。?/td> 68K
代理商： HMJE13009A
HI-SINCERITY
MICROELECTRONICS CORP.
HMJE13009A
12 AMPERE NPN SILICON POWER TRANSISTOR
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2006.07.04
Page No. : 1/6
HMJE13009A
HSMC Product Specification
Description
The HMJE13009A is designed for high-voltage, high-speed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
220V switch-controls, Solenoid/Relay drivers and Deflectioncircuits.
Specification Features
V
CEO(sus)
=400V
Reverse Bias SOA with Inductive Loads @T
C
=100
°
C
Inductive Switching Matrix 3 to 12 Amp., 25 and 100
°
C…tc@8A, 100
°
C is 120ns(Typ.)
700V Blocking Capability
SOA and Switching Applications Information
Absolute Maximum Ratings
Characteristic
Symbol
V
CEO(sus)
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
Max.
400
700
9
12
24
6
12
18
36
Unit
Vdc
Vdc
Vd
Adc
Adc
Adc
Adc
Adc
Adc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak*
Base Current-Continuous
Base Current-Peak*
Emitter Current-Continuous
Emitter Current-Peak
Total Power Dissipation@T
A
=25
°
C
Derate above 25
°
C
Total Power Dissipation@T
C
=25
°
C
Derate above 25
°
C
Operating and Storage Junction Temperature Range
P
D
2
16
Watts
mW/
°
C
Watts
mW/
°
C
°
C
P
D
100
800
TJ, Tstg
-65 to +150
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
Thermal Characteristics
Characteristic
Symbol
Max.
1.25
Unit
°
C/W
°
C/W
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes:
1/8” from Case for 5 Seconds
62.5
T
L
275
°
C
TO-220AB
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