參數(shù)資料
型號： HMH2369
廠商： HSMC CORP.
英文描述： NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 瑞展晶體管
文件頁數(shù)： 1/4頁
文件大?。?/td> 43K
代理商： HMH2369
HI-SINCERITY
MICROELECTRONICS CORP.
HPH2369
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2002.02.18
Page No. : 1/4
HPH2369
HSMC Product Specification
Description
The HPH2369 is designed for general purpose switching and
amplifier applications.
Features
Low Collector Saturation Voltage
High speed switching Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 40 V
VCES Collector to Emitter Voltage ...................................................................................... 40 V
VCEO Collector to Emitter Voltage...................................................................................... 15 V
VEBO Emitter to Base Voltage........................................................................................... 4.5 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVCES
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
fT
Cob
Min.
40
15
40
4.5
-
-
-
-
-
-
700
-
40
20
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
80
-
-
-
Max.
-
-
-
-
400
300
100
250
300
600
850
1.5
120
-
-
4
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IC=10uA, VBE=0
IE=10uA, IC=0
VCB=20V, IE=0
VCE=25V, VBE=0
VEB=2V, IC=0
IC=10mA, IB=1mA
IC=10mA, IB=0.3mA
IC=100mA, IB=10mA
IC=10mA, IB=1mA
IC=100mA, IB=1mA
IC=10mA, VCE=1V
IC=100mA, VCE=2V
IC=10mA, VCE=10V, f=100MHZ
VCB=5V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
TO-92
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