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參數(shù)資料
| 型號(hào)： | HMC341 |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz |
| 中文描述： | 砷化鎵MMIC低噪聲放大器，24 - 30千兆赫 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 184K |
| 代理商： | HMC341 |
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment.
DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers.
The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265
deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds
of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter
of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as
possible <0.31 mm (12 mils).
HMC341
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 30 GHz
v00.0301
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC341_07 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz |
| HMC341_10 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz |
| HMC341LC3B | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA GAAS 12-QFN |
| HMC341LC3B_09 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz |
| HMC341LC3BTR | 功能描述:RF Amplifier IC General Purpose 21GHz ~ 29GHz 12-SMT (3x3) 制造商:analog devices inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 頻率:21GHz ~ 29GHz P1dB:8.5dBm 增益:13dB 噪聲系數(shù):3dB RF 類(lèi)型:通用 電壓 - 電源:3V 電流 - 電源:35mA 測(cè)試頻率:24GHz ~ 26GHz 封裝/外殼:12-VFQFN 裸露焊盤(pán) 供應(yīng)商器件封裝:12-SMT（3x3） 標(biāo)準(zhǔn)包裝:1 |
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