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參數(shù)資料
| 型號： | HMC341 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz |
| 中文描述： | 砷化鎵MMIC低噪聲放大器，24 - 30千兆赫 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 184K |
| 代理商： | HMC341 |
MICROWAVE CORPORATION
1 - 21
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
1
Pad Number
Function
Description
Interface Schematic
1
RF Input
This pad is AC coupled and matched to 50 Ohm from 24 - 30 GHz
2
RF Output
This pad is AC coupled and matched to 50 Ohm from 24 - 30 GHz
3
Vdd
Power Supply for the 2-stage amplifier. An external RF bypass capacitor
of 100 - 300 pF is required. The bond length to the capacitor should be
as short as possible. The ground side of the capacitor should be con-
nected to the housing ground.
Outline Drawing
HMC341
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 30 GHz
v00.0301
Absolute Maximum Ratings
Pad Descriptions
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Drain Bias Voltage (Vdd)
+5.5 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc)
+5 dBm
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 3.44 mW/°C above 85 °C)
0.310 W
Thermal Resistance
(channel to die bottom)
290 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
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| HMC341_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz |
| HMC341_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz |
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