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參數(shù)資料
| 型號(hào)： | HMC341 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz |
| 中文描述： | 砷化鎵MMIC低噪聲放大器，24 - 30千兆赫 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 184K |
| 代理商： | HMC341 |
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han-
dling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bring-
ing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die
should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-
to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by
conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.
Assembly Diagrams
HMC341
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 30 GHz
v00.0301
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| HMC341_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz |
| HMC341_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz |
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