參數(shù)資料
型號： HMBT6517
廠商： HSMC CORP.
英文描述： NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 瑞展晶體管
文件頁數(shù)： 1/3頁
文件大小： 31K
代理商： HMBT6517
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT6517
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT6517 is designed for general purpose applications requiring high
breakdown voltages.
Features
Spec. No. : HE6836
Issued Date : 1994.07.20
Revised Date : 2002.10.25
Page No. : 1/3
HMBT6517
HSMC Product Specification
High Collector-Emitter Breakdown Voltage
Low Collector-Emitter Saturation Voltage
The HMBT6517 is complementary to HMBT6520
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................................ +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................................ 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ................................................................................................... 350 V
VCEO Collector to Emitter Voltage................................................................................................ 350 V
VEBO Emitter to Base Voltage ......................................................................................................... 5 V
IC Collector Current ................................................................................................................... 500 mA
IB Base Current ......................................................................................................................... 250 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
VBE(on)
*VBE(sat)1
*VBE(sat)2
*VBE(sat)3
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
350
350
5
-
-
-
-
-
-
-
-
-
-
20
30
30
20
15
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
300
350
500
1
2
750
850
900
-
-
200
200
-
200
6
Unit
V
V
V
nA
nA
mV
mV
mV
V
V
mV
mV
mV
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=250V
VEB=5V
IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
IC=50mA, IB=5mA
VCE=10V, IC=100mA
IB=1mA, IC=10mA
IB=2mA, IC=20mA
IB=3mA, IC=30mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=10mA, VCE=20V, f=20MHz
VCB=20V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
SOT-23
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