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參數(shù)資料
| 型號： | HMBT8050 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL TRANSISTOR |
| 中文描述： | npn型外延晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 30K |
| 代理商： | HMBT8050 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT8050
NPN EPITAXIAL TRANSISTOR
Spec. No. : HE6812
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 1/3
HMBT8050
HSMC Product Specification
Description
The HMBT8050 is designed for general purpose amplifier
applications.
Features
High DC Current hFE=150-400 at IC=150mA
Complementary to HMBT8550
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 25 V
VCEO Collector to Emitter Voltage...................................................................................... 20 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current ....................................................................................................... 700 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE
fT
Cob
Min.
25
20
5
-
-
-
150
150
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
1
500
1
500
-
10
Unit
V
V
V
uA
mV
V
Test Conditions
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=20V. IE=0
IC=500mA, IB=50mA
VCE=1V, IC=150mA
VCE=1V, IC=150mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE
Rank
Range
D9D
150-300
D9E
250-500
SOT-23
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMBT8099 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT8550 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HMBT8599 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HMBT9014 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT9018 | NPN EPITAXIAL PLANAR TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMBT8099 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT8550 | 制造商:HSMC 制造商全稱:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR |
| HMBT8599 | 制造商:HSMC 制造商全稱:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR |
| HMBT9014 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HMBT9018 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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