參數(shù)資料
型號(hào): HM624100HCJP-10
廠商: Hitachi,Ltd.
英文描述: 4M High Speed SRAM (1-Mword x 4-bit)
中文描述: 4分高速SRAM(1 - Mword × 4位)
文件頁數(shù): 6/14頁
文件大?。?/td> 65K
代理商: HM624100HCJP-10
HM624100HC Series
6
DC Characteristics
(Ta = 0 to +70°C, V
CC
= 5.0 V ± 10 %, V
SS
= 0V)
Parameter
Symbol Min
Typ*
1
Max
Unit
Test conditions
Input leakage current
II
LI
I
II
LO
I
I
CC
2
μA
Vin = V
SS
to V
CC
Vin = V
SS
to V
CC
Min cycle
CS
= V
, lout = 0 mA
Other inputs = V
IH
/V
IL
Min cycle,
CS
= V
,
Other inputs = V
IH
/V
IL
f = 0 MHz
V
CS
V
- 0.2 V,
(1) 0 V Vin 0.2 V or
(2) V
CC
Vin V
Output leakage current
2
μA
Operation power supply current
140
mA
Standby power supply current
I
SB
40
mA
I
SB1
TBD
5
mA
CC
- 0.2 V
—*
2
TBD*
2
1.2*
2
Output voltage
V
OL
V
OH
0.4
V
I
OL
= 8 mA
I
OH
= –4 mA
2.4
V
Notes: 1. Typical values are at V
CC
= 5.0 V, Ta = +25°C and not guaranteed.
2. This characteristics is guaranteed only for L-version.
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input capacitance*
1
Cin
6
pF
Vin = 0 V
Input/output capacitance*
1
Note: 1. This parameter is sampled and not 100% tested.
C
I/O
8
pF
V
I/O
= 0 V
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