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參數(shù)資料
| 型號： | HM624100HCJP-10 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4M High Speed SRAM (1-Mword x 4-bit) |
| 中文描述： | 4分高速SRAM（1 - Mword × 4位） |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 65K |
| 代理商： | HM624100HCJP-10 |
HM624100HC Series
12
Low V
CC
Data Retention Characteristics
(Ta = 0 to +70°C)
This characteristics is guaranteed only for L-version.
Parameter
Symbol
Min
Typ*
1
Max
Unit
Test conditions
V
CS
V
– 0.2 V
(1) 0 V Vin 0.2 V or
(2) V
CC
Vin V
V
= 3 V, V
CS
V
CC
– 0.2 V
(1) 0 V Vin 0.2 V or
(2) V
CC
Vin V
See retention waveform
V
CC
for data retention
V
DR
2.0
—
—
V
CC
– 0.2 V
Data retention current
I
CCDR
—
TBD
800
μA
CC
– 0.2 V
Chip deselect to data
retention time
t
CDR
0
—
—
ns
Operation recovery time
Note: 1. Typical values are at V
CC
= 3.0 V, Ta = +25C, and not guaranteed.
t
R
5
—
—
ms
Low V
CC
Data Retention Timing Waveform
CC
V
2.2 V
DR
V
4.5 V
0 V
CS
t
CDR
t
R
Data retention mode
V
CC
≥
CS
≥
V
CC
– 0.2 V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HM624100HCJP-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM: Notes on Usage Technical Update/Device |
| HM624100HCLJP-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M High Speed SRAM (1-Mword x 4-bit) |
| HM624100HCLJP-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM: Notes on Usage Technical Update/Device |
| HM624100HJP-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M High Speed SRAM (1-Mword x 4-bit) |
| HM624100HJP-12 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M High Speed SRAM (1-Mword x 4-bit) |
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