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參數(shù)資料
| 型號： | HM2222A |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 38K |
| 代理商： | HM2222A |
HI-SINCERITY
MICROELECTRONICS CORP.
HM2222A
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. :HE9521
Issued Date : 1997.06.18
Revised Date : 2002.04.10
Page No. : 1/4
HM2222A
HSMC Product Specification
Description
The HM2222A is designed for general purpose amplifier and high
speed, medium-power switching applications.
Features
Low collector saturation voltage
High speed switching
For complementary use with PNP type HPN2907A
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C).................................................................................... 1.2 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 75 V
VCES Collector to Emitter Voltage ...................................................................................... 40 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 600 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
*hFE6
fT
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
50
300
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
50
300
1
1.2
2
-
-
-
300
-
-
-
Unit
V
V
V
nA
nA
nA
mV
V
V
V
Test Conditions
IC=10uA
IC=10mA
IE=10uA
VCB=60V
VCB=60V, VEB(off)=3V
VEB=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=150mA
VCE=20V, IC=20mA, f=100MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
SOT-89
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