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參數(shù)資料
| 型號： | HM27 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 30K |
| 代理商： | HM27 |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HE9517-B
Issued Date : 1997.06.06
Revised Date : 2000.10.01
Page No. : 1/3
HSMC Product Specification
HM27
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington transistor.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ........................................................................................ 60 V
VCES Collector to Emitter Voltage...................................................................................... 60 V
VEBO Emitter to Base Voltage ........................................................................................... 10 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
ICES
*VCE(sat)
VBE(on)
*hFE1
*hFE2
Min.
60
60
10
-
-
-
-
-
10K
10K
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
500
1.5
2
-
-
Unit
V
V
V
nA
nA
nA
V
V
Test Conditions
IC=100uA
IC=100uA
IE=10uA
VCB=50V
VBE=10V
VCE=50V
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
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