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參數(shù)資料
| 型號(hào)： | HM28S |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 33K |
| 代理商： | HM28S |
HI-SINCERITY
MICROELECTRONICS CORP.
HM28S
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6450
Issued Date : 1992.11.25
Revised Date : 2002.04.18
Page No. : 1/3
HM28S
HSMC Product Specification
Description
The HM28S is a NPN silicon transistor, designed for use in general-purpose
SPEECH SYNTHSIZER (Voice Rom) IC audio output driver stage amplifier
applications.
Features
Excellent hFE Linearity
High DC Current Gain
High Power Dissipation
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature .................................................................................................. 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................................. 850 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage..................................................................................................... 40 V
VCEO Collector to Emitter Voltage ................................................................................................. 20 V
VEBO Emitter to Base Voltage.......................................................................................................... 6 V
IC Collector Current ..................................................................................................................... 1.25 A
IB Base Current ............................................................................................................................. 0.4 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
hFE3
hFE4
fT
Cob
Min.
40
20
6
-
-
-
290
300
300
300
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
9
Max.
-
-
-
100
100
0.55
-
1000
-
-
-
-
Unit
V
V
V
nA
nA
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=35V, IE=0
VEB=6V, IC=0
IC=600mA, IB=20mA
VCE=1V, IC=1mA
VCE=1V, IC=0.1A
VCE=1V, IC=0.3A
VCE=1V, IC=0.5A
VCE=10V, IC=50mA, f=1MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification of hFE2
Rank
Range
B
C
D
300-550
500-700
650-1000
TO-92
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