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參數(shù)資料
| 型號： | HLB124E |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 37K |
| 代理商： | HLB124E |
HI-SINCERITY
MICROELECTRONICS CORP.
HLB124E
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB124E is designed for high voltage, high speed switching inductive
circuits, and amplifier applications.
Spec. No. : HE6727
Issued Date : 1998.07.01
Revised Date : 2002.01.07
Page No. : 1/4
HLB124E
HSMC Product Specification
Features
High Speed Switching
Low Saturation Voltage
High Reliability
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature ................................................................................................................ +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C)................................................................................................. 35 W
Maximum Voltages and Currents (Ta=25
°
C)
BVCBO Collector to Base Voltage ................................................................................................. 600 V
BVCEO Collector to Emitter Voltage.............................................................................................. 400 V
BVEBO Emitter to Base Voltage....................................................................................................... 8 V
IC Collector Current (DC)................................................................................................................... 2 A
IC Collector Current (Pulse)............................................................................................................... 4 A
IB Base Current (DC)..........................................................................................................................1 A
IB Base Current (Pulse)..................................................................................................................... 2 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Min.
600
400
8
-
-
-
-
-
-
10
10
6
15
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
0.3
0.8
0.9
1.2
40
-
-
-
Unit
V
V
V
uA
uA
V
V
V
V
Test Conditions
IC=1mA
IC=10mA
IE=1mA
VCB=600V
VEB=9V, IC=0
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
VCE=5V, IC=0.3A
VCE=5V, IC=0.5A
VCE=5V, IC=1A
VCE=10V, IC=0.3, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
Classification of hFE1
Rank
Range
B1
B2
B3
B4
B5
B6
10~17
13~22
18~27
23~32
28~37
33~40
TO-220
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HLB125E | NPN EPITAXIAL PLANAR TRANSISTOR |
| HLB125HE | NPN EPITAXIAL PLANAR TRANSISTOR |
| HLM358 | LOW POWER DUAL OPERATIONAL AMPLIFIERS |
| HLM358P | LOW POWER DUAL OPERATIONAL AMPLIFIERS |
| HLM358S | LOW POWER DUAL OPERATIONAL AMPLIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HLB124-TO-220 | 制造商:ANALOGICTECH 制造商全稱:Advanced Analogic Technologies 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
| HLB125E | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HLB125HE | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HLB15-PET-BK-10M | 制造商:HellermannTyton 功能描述:SLEEVING BRAID 5-21MM 10M 制造商:HellermannTyton 功能描述:SLEEVING, BRAID, 5-21MM, 10M |
| HLB25-PET-BK | 制造商:HellermannTyton 功能描述:SLEEVING BRAID 10-30MM 10M 制造商:HellermannTyton 功能描述:SLEEVING, BRAID, 10-30MM, 10M |
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