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參數(shù)資料
| 型號(hào)： | HLB125HE |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 50K |
| 代理商： | HLB125HE |
HI-SINCERITY
MICROELECTRONICS CORP.
HLB125HE
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE200214
Issued Date : 2002.09.01
Revised Date : 2004.11.08
Page No. : 1/5
HLB125HE
HSMC Product Specification
Description
The HLB125HE is designed for lighting applications and low switch-mode power
supplies. And it is high voltage capability and high switching speeds.
Features
High Speed Switching
Low Saturation Voltage
High Reliability
Absolute Maximum Ratings
(T
A
=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................................... -50 ~ +150
°
C
Junction Temperature..................................................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
C
=25
°
C).................................................................................................................... 75 W
Maximum Voltages and Currents (T
A
=25
°
C)
V
CEX
Collector to Emitter Voltage ...................................................................................................................... 700 V
V
CEO
Collector to Emitter Voltage...................................................................................................................... 400 V
V
EBO
Emitter to Base Voltage................................................................................................................................ 9 V
I
C
I
B
Base Current (Continuous) ................................................................................................................................ 2 A
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CEX
BV
CEO
I
EBO
I
CEX
*V
CE(sat)1
*V
CE(sat)2
*V
CE(sat)3
*V
BE(sat)
*V
BE(sat)
*h
FE
Min.
700
400
-
-
-
-
-
-
-
15
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
1
1
500
0.6
1
1.2
1.6
25
Unit
V
V
mA
mA
mV
V
V
V
V
Test Conditions
I
C
=1mA, V
BE(off)
=1.5V
I
C
=10mA
V
EB
=9V
V
CE
=700V, V
BE(off)
=1.5V
I
C
=1A, I
B
=200mA
I
C
=2A, I
B
=500mA
I
C
=4A, I
B
=1A
I
C
=1A, I
B
=200mA
I
C
=2A, I
B
=500mA
I
C
=2A, V
CE
=5V
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
TO-220
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