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參數(shù)資料
| 型號： | HLB125E |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 39K |
| 代理商： | HLB125E |
HI-SINCERITY
MICROELECTRONICS CORP.
HLB125E
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB125E is designed for lighting applications and low switch-mode
power supplies. And it is high voltage capability and high switching speeds.
Features
Spec. No. : HE6703
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 1/4
HLB125E
HSMC Product Specification
High Speed Switching
Low Saturation Voltage
High Reliability
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature ................................................................................................................ +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C)................................................................................................. 40 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage.................................................................................................... 600 V
VCEO Collector to Emitter Voltage ................................................................................................ 400 V
VEBO Emitter to Base Voltage.......................................................................................................... 9 V
IC Collector Current (DC)................................................................................................................... 5 A
IC Collector Current (Pulse)............................................................................................................... 8 A
IB Base Current (DC)......................................................................................................................... 2 A
IB Base Current (Pulse)..................................................................................................................... 4 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICES
ICEO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
Min.
600
400
9
-
-
-
-
-
-
-
8
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.5
0.7
1.1
1.1
1.2
35
-
Unit
V
V
V
UA
uA
V
V
V
V
V
Test Conditions
IC=1mA, IE=0
IC=10mA, IB=0
IE=10mA, IC=0
VCE=700V
VCE=400V
IC=1A, IB=0.2A
IC=2A, IB=0.4A
IC=3A, IB=0.75A
IC=1A, IB=0.2A
IC=2A, IB=0.4A
IC=2A, VCE=5V
IC=10mA, VCE=5V
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
Classification Of hFE1
Rank
hFE1
B1
8-17
B2
B3
B4
B5
15-21
19-25
23-31
29-35
C
B
E
Internal Schematic Diagram
TO-220
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