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參數(shù)資料
| 型號： | HJ112 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | HJ112 |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6030
Issued Date : 1998.07.01
Revised Date : 2002.08.13
Page No. : 1/4
HJ112
HSMC Product Specification
HJ112
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ112 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature...................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C)..................................................................................... 20 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage....................................................................................... 100 V
VCEO Collector to Emitter Voltage.................................................................................... 100 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current .............................................................................................................. 4 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)1
*VBE(on)
*hFE1
*hFE2
*hFE3
Cob
Min.
100
100
-
-
-
-
-
500
1
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
10
20
2
2.5
2.8
-
12
-
100
Unit
V
V
uA
uA
mA
V
V
Test Conditions
IC=1mA
IC=30mA
VCB=80V
VCE=50V
IC=2A, IB=8mA
IC=2A, VCE=3V
IC=0.5A, VCE=3V
IC=2A, VCE=3V
IC=4A, VCE=3V
VCB=10V
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
K
pF
TO-252
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