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參數(shù)資料
| 型號： | HI50 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 28K |
| 代理商： | HI50 |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9016
Issued Date : 1996.04.12
Revised Date : 2002.02.26
Page No. : 1/3
HI50
HSMC Product Specification
HI50
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI50 is designed for line operated audio output amplifier switch
mode power supply drivers and other switching applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 500 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current .............................................................................................................. 1 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICES
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
500
400
5
-
-
-
-
-
30
10
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
200
1
1
1.5
150
-
-
Unit
V
V
V
uA
uA
mA
V
V
Test Conditions
IC=1mA
IC=30mA
IC=100uA
VCE=500V
VCE=300V
VEB=5V
IC=1A, IB=0.2A
VCE=10V, IC=1A
VCE=10V, IC=0.3A
VCE=10V, IC=1A
VCE=10V, IC=200mA, f=2MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
TO-251
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