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參數(shù)資料
| 型號： | HI42C |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 32K |
| 代理商： | HI42C |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9013-B
Issued Date : 1996.04.12
Revised Date : 2000.11.01
Page No. : 1/3
HSMC Product Specification
HI42C
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI42C is designed for use in general purpose amplifier, low
speed switching applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................ -100 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current............................................................................................................. -6 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICES
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
-100
-100
-5
-
-
-
-
-
30
15
3
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-10
-50
-500
-1.5
-2
-
75
-
Unit
V
V
V
uA
uA
uA
V
V
Test Conditions
IC=-1mA, IE=0
IC=-30mA, IB=0
IC=-100uA, IC=0
VCE=-100V, VEB=0
VCE=-60V, IB=0
VEB=-5V, IC=0
IC=-6A, IB=-600mA
VCE=-4V, IC=-6A
VCE=-4V, IC=-300mA
VCE=-4V, IC=-3A
VCE=-10V, IC=-500mA, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
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