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參數(shù)資料
| 型號： | HGTP1N120BND |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| 中文描述： | 1 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 75K |
| 代理商： | HGTP1N120BND |
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1
2
64
1.5
56
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
2.5
84
72
76
3
0.5
60
68
80
T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 13V
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
0.5
1
2
160
240
1.5
120
280
360
2.5
3
320
200
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 13V OR 15V
T
J
= 150
o
C, V
GE
= 13V OR 15V
I
C
,
0
2
4
6
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
8
10
12
14
15
14
16
18
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 20V
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
15
3
6
0
0
20
8
4
12
9
12
16
I
G(REF)
= 1mA, R
L
= 600
, T
C
= 25
o
C
V
CE
= 1200V
V
CE
= 800V
V
CE
= 400V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
50
C
100
150
250
300
200
350
C
IES
C
OES
C
RES
FREQUENCY = 1MHz
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
4
0
2
0
4
10
2
6
6
8
1
3
5
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
C
= 110
o
C
V
GE
= 12V
V
GE
= 10V
V
GE
= 15V
HGTP1N120BND, HGT1S1N120BNDS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP1N120CN | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTP1N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP20N35F3ULR3935 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| HGTP20N35G3VL | 功能描述:IGBT 晶體管 Coil Dri 20A 350V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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