- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384405 > HGTP1N120BND (HARRIS SEMICONDUCTOR) 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) PDF資料下載
參數(shù)資料
| 型號： | HGTP1N120BND |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| 中文描述： | 1 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 75K |
| 代理商： | HGTP1N120BND |
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
4
6
6
8
10
1
3
5
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 13V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -55
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
2
3
4
0
2
4
6
8
10
1
6
0
5
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
E
O
,
μ
J
1000
600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
800
400
200
1.5
1
2
0.5
1200
2.5
0
3
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 13V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
0
1
1.5
2
0.5
50
150
100
200
250
2.5
3
T
J
= 150
o
C, V
GE
= 13V OR 15V
T
J
= 25
o
C, V
GE
= 13V OR 15V
R
G
= 82
, L = 4mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
0
1.5
2
2.5
3
t
d
,
8
12
20
16
24
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
V
GE
25
o
C
150
o
C
25
o
C
150
o
C
13V
13V
15V
15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
1
4
8
24
20
12
2
0.5
16
1.5
2.5
28
3
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
HGTP1N120BND, HGT1S1N120BNDS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGT1S20N60A4S9A | 600V, SMPS Series N-Channel IGBTsnull |
| HGT1S20N60B3S | XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN |
| HGT1S20N60B3S | 40A, 600V, UFS Series N-Channel IGBTs |
| HGTG20N60B3 | 40A, 600V, UFS Series N-Channel IGBTs(40A, 600V，N溝道絕緣柵雙極晶體管) |
| HGT1S20N60C3R | XC9536-7CS48C - NOT RECOMMENDED for NEW DESIGN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP1N120CN | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTP1N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP20N35F3ULR3935 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP20N35F3VL | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP20N35G3VL | 功能描述:IGBT 晶體管 Coil Dri 20A 350V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。