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參數(shù)資料
| 型號： | HGTP1N120BND |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| 中文描述： | 1 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 75K |
| 代理商： | HGTP1N120BND |
3
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
V
EC
t
rr
R
θ
JC
IGBT and Diode at T
J
= 150
o
C
I
CE
= 1.0A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 4mH
Test Circuit (Figure 20)
-
13
17
ns
Current Rise Time
-
11
15
ns
Current Turn-Off Delay Time
-
75
88
ns
Current Fall Time
-
258
370
ns
Turn-On Energy
-
385
440
J
Turn-Off Energy (Note 3)
-
120
175
J
Diode Forward Voltage
I
EC
= 1.0A
I
EC
= 1.0A, dI
EC
/dt = 200A/
μ
s
IGBT
-
1.3
1.8
V
Diode Reverse Recovery Time
-
-
50
ns
Thermal Resistance Junction To Case
-
-
2.1
o
C/W
o
C/W
Diode
-
-
3
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-on losses
include losses due to diode recovery.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
4
5
1
25
75
100
125
150
3
2
6
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
3
0
I
C
,
1
2
600
800
400
200
1000
1200
0
4
6
5
7
T
J
= 150
o
C, R
G
= 82
, V
GE
= 15V, L = 2mH
f
M
,
0.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
10
2.0
1.0
100
3.0
200
300
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
R
JC
= 2.1
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
75
o
C
75
o
C
V
GE
15V
13V
110
o
C
13V
15V
110
o
C
T
J
= 150
o
C, R
G
= 82
, L = 4mH, V
CE
= 960V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
13
14
14.5
15
10
12
16
20
18
13.5
14
10
12
16
20
18
14
V
CE
= 840V, R
G
= 82, T
J
= 125
o
C
t
SC
I
SC
HGTP1N120BND, HGT1S1N120BNDS
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| HGTP1N120CN | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTP1N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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