參數(shù)資料
型號(hào)： HGTP12N60C3D
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
中文描述： 24 A, 600 V, N-CHANNEL IGBT, TO-220AB
文件頁數(shù)： 6/8頁
文件大?。?/td> 154K
代理商： HGTP12N60C3D
2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
(Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
J
,
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= P
D
x Z
θ
JC
x R
θ
JC
+ T
C
t
1
t
2
P
D
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
0.5
1.0
1.5
2.5
3.0
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
10
0
20
30
40
50
25
o
C
100
o
C
150
o
C
30
20
10
0
t
R
,
I
EC
, FORWARD CURRENT (A)
5
10
20
0
15
35
25
15
5
t
rr
t
a
t
b
T
C
= 25
o
C, dI
EC
/dt = 200A/ms
Test Circuit and Waveform
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
R
G
= 25
L = 100
μ
H
V
DD
= 480V
+
-
HGTP12N60C3D
t
fi
t
d(OFF)I
t
ri
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
HGTP12N60C3D, HGT1S12N60C3DS
相關(guān)PDF資料
PDF描述
HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP14N36G3VL DIODE ZENER SINGLE 500mW 30Vz 4.2mA-Izt 0.05 0.1uA-Ir 23Vr DO35-GLASS 5K/REEL
HGT1S14N36G3VL 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
HGT1S14N36G3VLS DIODE ZENER SINGLE 500mW 39Vz 3.2mA-Izt 0.05 0.1uA-Ir 32Vr DO35-GLASS 5K/AMMO
HGTP14N37G3VL TRANSISTOR PNP BIPOLAR 45V SOT23
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTP12N60C3R 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTP12N60D1 制造商:Harris Corporation 功能描述:
HGTP14N0FVLR4600 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTP14N36G3VL 功能描述:IGBT 晶體管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTP14N37G3VL 功能描述:IGBT 晶體管 14A 370V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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