- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384406 > HGTP12N60C3D (INTERSIL CORP) 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes PDF資料下載
參數(shù)資料
| 型號： | HGTP12N60C3D |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 154K |
| 代理商： | HGTP12N60C3D |
2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES
600
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Average Diode Forward Current at 110
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
24
12
12
96
±
20
±
30
A
A
A
A
V
V
W
24A at 600V
104
0.83
-40 to 150
260
4
13
W/
o
C
o
C
o
C
μ
s
μ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
-
-
250
μ
A
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
, V
GE
= 15V
-
1.65
2.0
V
-
1.85
2.2
V
I
C
= 15A, V
GE
= 15V
-
1.80
2.2
V
-
2.0
2.4
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A, V
CE
= V
GE
3.0
5.0
6.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
±
20V
T
J
= 150
o
C,
V
GE
= 15V,
R
G
= 25
,
L = 100
μ
H
-
-
±
100
nA
Switching SOA
SSOA
V
CE(PK)
= 480V
80
-
-
A
V
CE(PK)
= 600V
24
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
7.6
-
V
On-State Gate Charge
Q
g(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
48
55
nC
V
GE
= 20V
-
62
71
nC
Current Turn-On Delay Time
t
d(ON)I
T
J
= 150
o
C,
I
CE
= I
C110,
V
CE(PK)
= 0.8 BV
CES,
V
GE
= 15V,
R
G
= 25
,
L = 100
μ
H
-
28
-
ns
Current Rise Time
t
ri
-
20
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
270
400
ns
Current Fall Time
t
fi
-
210
275
ns
Turn-On Energy
E
ON
-
380
-
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
900
-
μ
J
Diode Forward Voltage
V
EC
I
EC
= 12A
-
1.7
2.1
V
HGTP12N60C3D, HGT1S12N60C3DS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGT1S12N60C3DS | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGTP14N36G3VL | DIODE ZENER SINGLE 500mW 30Vz 4.2mA-Izt 0.05 0.1uA-Ir 23Vr DO35-GLASS 5K/REEL |
| HGT1S14N36G3VL | 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGT1S14N36G3VLS | DIODE ZENER SINGLE 500mW 39Vz 3.2mA-Izt 0.05 0.1uA-Ir 32Vr DO35-GLASS 5K/AMMO |
| HGTP14N37G3VL | TRANSISTOR PNP BIPOLAR 45V SOT23 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP12N60C3R | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP12N60D1 | 制造商:Harris Corporation 功能描述: |
| HGTP14N0FVLR4600 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP14N36G3VL | 功能描述:IGBT 晶體管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP14N37G3VL | 功能描述:IGBT 晶體管 14A 370V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。