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參數(shù)資料
| 型號(hào)： | HGTP12N60C3D |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 154K |
| 代理商： | HGTP12N60C3D |
2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
FIGURE 11. TURN ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
05
10
15
20
E
O
,
V
GE
= 15V
0.5
1.0
1.5
2.0
25
30
V
GE
= 10V
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
5
10
15
20
25
30
0.5
1.0
1.5
2.0
2.5
3.0
0
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 10V or 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
M
,
5
10
20
30
10
100
200
1
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
=
1.2
o
C/W
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 25
, L = 100
μ
H
V
GE
= 15V
V
GE
= 10V
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
100
200
300
400
500
600
0
20
40
60
80
100
T
J
= 150
o
C, V
GE
= 15V, R
G
= 25
, L = 100
μ
H
LIMITED BY
CIRCUIT
C
OES
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
500
1000
1500
2000
2500
C
FREQUENCY = 1MHz
C
IES
V
G
,
Q
g
, GATE CHARGE (nC)
15
12
9
6
3
0
10
20
30
40
50
60
0
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
I
G
REF = 1.276mA, R
L
= 50
, T
C
= 25
o
C
HGTP12N60C3D, HGT1S12N60C3DS
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