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參數(shù)資料
| 型號： | HGTP12N60A4D |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 173K |
| 代理商： | HGTP12N60A4D |
2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
5
10
15
20
25
0
0.5
1.0
2.0
2.5
3.0
1.5
FREQUENCY = 1MHz
C
OES
C
IES
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
9
1.9
10
12
2.0
2.2
2.1
11
13
14
15
16
2.3
2.4
V
C
,
I
CE
= 18A
I
CE
= 12A
I
CE
= 6A
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s, T
J
= 25
o
C
0.5
1.0
1.5
2.5
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
0
4
6
8
10
25
o
C
125
o
C
2
14
12
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%,
60
40
20
0
t
r
,
I
EC
, FORWARD CURRENT (A)
1
12
11
8
70
50
30
10
2
3
4
5
6
7
9
10
80
90
25
o
C t
rr
25
o
C t
a
25
o
C t
b
125
o
C t
b
125
o
C t
a
dI
EC
/dt = 200A/
μ
s
125
o
C t
rr
300
400
500
700
800
t
r
,
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
200
600
10
5
25
20
35
30
45
40
55
50
15
60
65
900
1000
125
o
C t
a
125
o
C t
b
25
o
C t
a
25
o
C t
b
I
EC
= 12A, V
CE
= 390V
300
200
100
0
200
Q
r
,
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
1000
500
350
250
150
50
300
400
900
400
600
700
800
125
o
C I
EC
= 12A
125
o
C I
EC
= 6A
25
o
C I
EC
= 6A
25
o
C I
EC
= 12A
V
CE
= 390V
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGT1S12N60A4DS9A | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB |
| HGTP12N60A4D | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk |
| HGT1S12N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG12N60A4 | 600V, SMPS Series N-Channel IGBTs |
| HGTG12N60D1 | 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP12N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-220 |
| HGTP12N60B3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:27A, 600V, UFS Series N-Channel IGBTs |
| HGTP12N60B3D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
| HGTP12N60C3 | 功能描述:IGBT 晶體管 24a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP12N60C3D | 功能描述:IGBT 晶體管 HGTP12N60C3D RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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