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參數資料
| 型號： | HGTP12N60A4D |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數： | 5/8頁 |
| 文件大?。?/td> | 173K |
| 代理商： | HGTP12N60A4D |
2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
4
8
2
95
6
85
90
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
12
115
16
14
105
110
10
100
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
18
20
22
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
10
30
20
50
70
40
60
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
4
8
2
6
12
16
14
10
18
20
22
24
80
90
I
C
,
0
50
100
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
200
14
15
250
6
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
16
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2
14
0
0
20
10
30
4
10
40
I
G(REF)
= 1mA, R
L
= 25
, T
C
= 25
o
C
V
CE
= 200V
V
CE
= 400V
50
60
70
80
6
8
12
16
V
CE
= 600V
I
CE
= 24A
I
CE
= 12A
I
CE
= 6A
0
0.2
0.4
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
0.6
1.0
125
25
150
1.2
0.8
E
T
,
R
G
= 10
, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
E
0.1
10
100
R
G
, GATE RESISTANCE (
)
1
5
1000
I
CE
= 12A
I
CE
= 24A
I
CE
= 6A
10
T
J
= 125
o
C, L = 500
μ
H,
V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
E
T
,
E
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
相關PDF資料 |
PDF描述 |
|---|---|
| HGT1S12N60A4DS9A | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB |
| HGTP12N60A4D | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk |
| HGT1S12N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG12N60A4 | 600V, SMPS Series N-Channel IGBTs |
| HGTG12N60D1 | 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HGTP12N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-220 |
| HGTP12N60B3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:27A, 600V, UFS Series N-Channel IGBTs |
| HGTP12N60B3D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
| HGTP12N60C3 | 功能描述:IGBT 晶體管 24a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP12N60C3D | 功能描述:IGBT 晶體管 HGTP12N60C3D RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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