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參數(shù)資料
| 型號： | HGTP10N40C1D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | CAP 0.082UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 |
| 中文描述： | 17.5 A, 400 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 37K |
| 代理商： | HGTP10N40C1D |
3-22
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Typical Performance Curves
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. R
G
= 50
,
V
GE
= 0V ARE THE MIN. ALLOWABLE VALUES
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERAT-
ING CURVE
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0
-75
-50
-25
T
J
, JUNCTION TEMPERATURE (
o
C)
0
+25
+50
+75 +100 +125 +150 +175
I
C
,
V
GE
= 10V, R
GEN
= R
GS
= 100
100
80
60
40
20
0
+25
+50
T
C
, CASE TEMPERATURE (
o
C)
+75
+100
+125
+150
R
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
+50
+100
+150
N
V
GE
= V
CE
, I
C
= 1mA
35
30
25
20
15
10
5
0
2.5
5.0
7.5
10.0
I
C
,
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE TEST, V
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
-40
o
C
+25
o
C
+125
o
C
0
35
30
25
20
15
10
5
0
1
2
3
4
5
I
C
,
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
= 20V
V
GE
= 10V
V
GE
= 8V
V
GE
= 7V
V
GE
= 6V
V
GE
= 5V
V
GE
= 4V
T
C
= +25
o
C
0
35
30
25
20
15
10
5
0
1
2
3
4
I
C
,
V
CE(ON)
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE TEST, V
GE
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
+25
o
C
0
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|---|---|
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相關代理商/技術參數(shù) |
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| HGTP10N40E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N40E1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N40EID | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP10N40F1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N50C1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, 12A, 400V and 500V N-Channel IGBTs |
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