參數(shù)資料
型號(hào): HGTP10N120BN
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 35A, 1200V, NPT Series N-Channel IGBT
中文描述: 35 A, 1200 V, N-CHANNEL IGBT
封裝: TO-220AB ALTERNATE VERSION, 3 PIN
文件頁數(shù): 6/7頁
文件大小: 81K
代理商: HGTP10N120BN
6
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
5
10
15
20
25
0
1
C
IES
C
OES
3
4
FREQUENCY = 1MHz
2
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
6
12
0
1
0
2
3
15
DUTY CYCLE <0.5%, T
C
= 110
o
C
PULSE DURATION = 250
μ
s
9
3
4
V
GE
= 10V
V
GE
= 15V
t
1
t
2
P
D
SINGLE PULSE
t
1
, RECTANGULAR PULSE DURATION (s)
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
Z
θ
J
,
0.5
0.2
0.1
0.05
0.02
0.01
Test Circuit and Waveforms
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
R
G
= 10
L = 2mH
V
DD
= 960V
+
-
HGTG10N120BND
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
相關(guān)PDF資料
PDF描述
HGTP10N120BN 35A, 1200V, NPT Series N-Channel IGBT
HGT1S12N60A4DS 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V,SMPS系列 N溝道絕緣柵雙極型晶體管(帶反并行超快速二極管))
HGTG12N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V,SMPS系列 N溝道絕緣柵雙極型晶體管(帶反并行超快速二極管))
HGT1S12N60A4S 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N溝道絕緣柵雙極型晶體管)
HGTG12N60A4 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N溝道絕緣柵雙極型晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTP10N120BNFS 制造商:Fairchild Semiconductor Corporation 功能描述:
HGTP10N40C1 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTP10N40C1D 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTP10N40E1 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTP10N40E1D 制造商:Rochester Electronics LLC 功能描述:- Bulk