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參數(shù)資料
| 型號： | HGTP10N120BN |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 35A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 35 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-220AB ALTERNATE VERSION, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 81K |
| 代理商： | HGTP10N120BN |
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 10A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 2mH
Test Circuit (Figure 18)
-
23
26
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
165
210
ns
Current Fall Time
t
fI
-
100
140
ns
Turn-On Energy (Note 5)
E
ON1
-
0.32
0.4
mJ
Turn-On Energy (Note 5)
E
ON2
-
0.85
1.1
mJ
Turn-Off Energy (Note 4)
E
OFF
-
0.8
1.0
mJ
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 10A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 2mH
Test Circuit (Figure 18)
-
21
25
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
190
250
ns
Current Fall Time
t
fI
-
140
200
ns
Turn-On Energy (Note 5)
E
ON1
-
0.4
0.5
mJ
Turn-On Energy (Note 5)
E
ON2
-
1.75
2.3
mJ
Turn-Off Energy (Note 4)
E
OFF
-
1.1
1.4
mJ
Thermal Resistance Junction To Case
R
θ
JC
-
-
0.42
o
C/W
NOTES:
4. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 18.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
10
25
75
100
125
150
25
30
15
5
V
GE
= 15V
20
35
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
40
0
I
C
,
10
20
600
800
400
200
1000
1200
0
50
60
30
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 400
μ
H
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
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