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參數(shù)資料
| 型號(hào)： | HGTP10N120BN |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 35A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 35 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-220AB ALTERNATE VERSION, 3 PIN |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | HGTP10N120BN |
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
0
15
20
25
30
35
5
40
15
20
R
G
= 10
, L = 2mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
o
C, T
J
= 150
o
C, V
GE
= 15V
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
10
30
20
15
0
10
5
20
40
50
R
G
= 10
, L = 2mH, V
CE
= 960V
T
J
= 25
o
C OR T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
0
250
5
100
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
15
400
300
350
20
R
G
= 10
, L = 2mH, V
CE
= 960V
10
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
150
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
,
0
50
150
200
5
100
250
300
20
15
10
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
R
G
= 10
, L = 2mH, V
CE
= 960V
I
C
,
0
40
13
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
60
80
14
15
100
T
C
= 150
o
C
T
C
= -55
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 20V
20
T
C
= 25
o
C
7
V
G
,
Q
G
, GATE CHARGE (nC)
5
20
00
60
20
80
V
CE
= 800V
I
G (REF)
= 1mA, R
L
= 60
, T
C
= 25
o
C
V
CE
= 1200V
10
15
120
V
CE
= 400V
100
40
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
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相關(guān)代理商/技術(shù)參數(shù) |
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| HGTP10N120BNFS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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