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參數(shù)資料
| 型號(hào)： | HGTG20N60C3D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.3V 36-mc CPLD |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 123K |
| 代理商： | HGTG20N60C3D |
2001 Fairchild Semiconductor Corporation
HGTG20N60C3D Rev. B
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
C
1
2
3
4
5
C
IES
C
OES
C
RES
FREQUENCY = 1MHz
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-3
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.1
0.05
0.2
0.02
SINGLE PULSE
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
0.5
0.01
0.5
1.0
1.5
2.5
3.0
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
20
0
40
60
80
100
10
30
50
70
90
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
35
25
15
5
t
r
,
I
EC
, FORWARD CURRENT (A)
5
10
30
0
15
40
30
20
10
45
20
25
T
C
= 25
o
C, dI
EC
/dt = 200A/
μ
s
t
rr
t
a
t
b
HGTG20N60C3D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG20N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT |
| HGTG20N60C3R | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG24N60D1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTG24N60D1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTG24N60DID | 制造商:Harris Corporation 功能描述: |
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