參數(shù)資料
型號: HGTG20N60C3D
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 3.3V 36-mc CPLD
中文描述: 45 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁數(shù): 4/8頁
文件大?。?/td> 123K
代理商: HGTG20N60C3D
2001 Fairchild Semiconductor Corporation
HGTG20N60C3D Rev. B
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
f
M
,
2
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
5
1
100
40
10
20
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
R
JC
= 0.76
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
V
GE
15V
110
o
C
10V
15V
75
o
C
75
o
C
110
o
C
10V
T
J
= 150
o
C, R
G
= 10
,
L = 1mH, V
CE
= 480V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
13
14
15
2
4
6
8
150
200
250
300
350
t
SC
I
SC
10
12
14
400
450
V
CE
= 360V, R
G
= 10
, T
J
= 125
o
C
0
2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
20
8
4
80
60
40
100
6
10
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
150
200
250
300
0
2
3
0
50
1
4
100
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
C
= 150
o
C
T
C
= 25
o
C
5
6
T
C
= -55
o
C
E
O
,
2.5
1.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2.0
1.0
0.5
20
10
25
15
5
3.0
0
30
35
40
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
R
G
= 10
, L = 1mH, V
CE
= 480V
3.5
4.0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0
0.5
25
20
10
15
5
1.0
2.5
2.0
1.5
30
35
40
3.0
T
J
= 25
o
C; V
GE
= 10V OR 15V
T
J
= 150
o
C; V
GE
= 10V OR 15V
R
G
= 10
, L = 1mH, V
CE
= 480V
HGTG20N60C3D
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