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參數(shù)資料
| 型號： | HGTG20N60C3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 45A, 600V, UFS Series N-Channel IGBT(45A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 81K |
| 代理商： | HGTG20N60C3 |
1
File Number
4492.2
HGTG20N60C3, HGTP20N60C3,
HGT1S20N60C3S
45A, 600V, UFS Series N-Channel IGBT
This family of MOS gated high voltage switching devices
combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49178.
Symbol
Features
45A, 600V, T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 108ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N60C3
TO-247
G20N60C3
HGTP20N60C3
TO-220AB
G20N60C3
HGT1S20N60C3S
TO-263AB
G20N60C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3S9A.
C
E
G
G
C
E
COLLECTOR
(FLANGE)
G
C
E
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG20N60C3D | 功能描述:IGBT 晶體管 UFS 20A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG20N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT |
| HGTG20N60C3R | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG24N60D1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTG24N60D1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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