參數(shù)資料
型號(hào): HGTG20N60C3D
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(45A, 600V, UFS系列帶超快二極管的N溝道絕緣柵雙極型晶體管)
中文描述: 40 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁(yè)數(shù): 5/7頁(yè)
文件大小: 82K
代理商: HGTG20N60C3D
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
20
10
15
5
25
30
35
40
40
30
20
35
25
45
50
R
G
= 10
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
25
0
50
75
125
100
150
10
15
5
40
30
20
35
25
175
200
T
J
= 25
o
C and T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
R
G
= 10
, L = 1mH, V
CE
= 480V
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
15
25
5
250
20
100
175
125
150
200
225
t
d
,
30
35
40
R
G
= 10
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
275
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
60
80
100
40
50
70
90
10
20
25
5
15
30
35
40
R
G
= 10
, L = 1mH, V
CE
= 480V
110
120
T
J
= 150
o
C, V
GE
= 10V OR V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V OR 15V
I
C
,
0
50
100
150
5
7
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
9
10
6
11
200
250
300
12
13
14
15
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -55
o
C
Q
g
, GATE CHARGE (nC)
0
8
10
6
4
2
0
10
20
40
V
G
,
50
100
30
12
14
16
I
G (REF)
= 1mA, R
L
= 15
, T
C
= 25
o
C
V
CE
= 400V
V
CE
= 200V
V
CE
= 600V
60
70
80
90
HGTG20N60C3D
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