參數(shù)資料
型號(hào)： HGTG20N60C3D
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(45A, 600V, UFS系列帶超快二極管的N溝道絕緣柵雙極型晶體管)
中文描述： 40 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 82K
代理商： HGTG20N60C3D
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 1mH
Test Circuit (Figure 19)
-
28
32
ns
Current Rise Time
t
rI
-
24
28
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
280
450
ns
Current Fall Time
t
fI
-
108
210
ns
Turn-On Energy
E
ON
-
1.0
1.1
mJ
Turn-Off Energy (Note 3)
E
OFF
-
1.2
1.7
mJ
Diode Forward Voltage
V
EC
I
EC
= 20A
-
1.5
1.9
V
Diode Reverse Recovery Time
t
rr
I
EC
= 20A, dI
EC
/dt = 200A/
μ
s
-
-
55
ns
I
EC
= 2A, dI
EC
/dt = 200A/
μ
s
-
32
47
ns
Thermal Resistance Junction To Case
R
θ
JC
IGBT
-
-
0.76
o
C/W
Diode
-
-
1.2
o
C/W
NOTES:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
V
GE
= 15V
25
75
100
125
150
50
30
10
20
40
0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
60
700
40
0
I
C
,
20
300
400
200
100
500
600
0
80
100
120
140
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 100
μ
H
HGTG20N60C3D
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HGTG30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V, SMPS系列 N溝道IGBT,帶反并行超快二極管)
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