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參數(shù)資料
| 型號： | HGTG20N60C3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 45A, 600V, UFS Series N-Channel IGBT(45A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 81K |
| 代理商： | HGTG20N60C3 |
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
20
8
4
80
60
40
100
6
10
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
150
200
250
300
0
2
3
0
50
1
4
100
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
5
6
E
O
,
2.5
1.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2.0
1.0
0.5
20
10
25
15
5
3.0
0
30
35
40
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
R
G
= 10
, L = 1mH, V
CE
= 480V
3.5
4.0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0
0.5
25
20
10
15
5
1.0
2.5
2.0
1.5
30
35
40
3.0
T
J
= 25
o
C; V
GE
= 10V OR 15V
T
J
= 150
o
C; V
GE
= 10V OR 15V
R
G
= 10
, L = 1mH, V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
20
10
15
5
25
30
35
40
40
30
20
35
25
45
50
R
G
= 10
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
25
0
50
75
125
100
150
10
15
5
40
30
20
35
25
175
200
T
J
= 25
o
C AND T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
R
G
= 10
, L = 1mH, V
CE
= 480V
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG20N60C3D | 功能描述:IGBT 晶體管 UFS 20A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG20N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT |
| HGTG20N60C3R | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG24N60D1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTG24N60D1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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