參數(shù)資料
型號： HGTG20N60B3
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 40A, 600V, UFS Series N-Channel IGBTs(40A, 600V，N溝道絕緣柵雙極晶體管)
中文描述： 40 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁數(shù)： 5/6頁
文件大?。?/td> 138K
代理商： HGTG20N60B3
5
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
M
,
5
10
20
30
40
10
100
500
V
CE
= 480V
T
J
= 150
o
C, T
C
= 75
o
C, V
GE
= 15V
R
G
= 10
, L = 100
μ
H
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 0.76
o
C/W
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
100
200
300
400
500
600
700
0
20
0
40
80
100
120
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
T
C
= 150
o
C, V
GE
= 15V, R
G
= 10
60
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.1
0.05
0.2
0.02
SINGLE PULSE
t
1
t
2
P
D
Z
θ
J
,
0.5
0.01
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
Test Circuit and Waveform
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 17. SWITCHING TEST WAVEFORMS
R
G
= 10
L = 100
μ
H
V
DD
= 480V
+
-
RHRP3060
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
相關(guān)PDF資料
PDF描述
HGT1S20N60C3R XC9536-7CS48C - NOT RECOMMENDED for NEW DESIGN
HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs
HGTP20N60C3R 40A, 600V, Rugged UFS Series N-Channel IGBTs
HGTG20N60C3R 40A, 600V, Rugged UFS Series N-Channel IGBTs
HGT1S20N60C3S 45A, 600V, UFS Series N-Channel IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG20N60B3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V40ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,40A,TO-247
HGTG20N60B3 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR
HGTG20N60B3_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HGTG20N60B3_Q 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG20N60B3D 功能描述:IGBT 晶體管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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