參數(shù)資料
型號： HGTG20N60B3
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 40A, 600V, UFS Series N-Channel IGBTs(40A, 600V，N溝道絕緣柵雙極晶體管)
中文描述： 40 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁數(shù)： 4/6頁
文件大?。?/td> 138K
代理商： HGTG20N60B3
4
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Continued)
t
d
,
10
20
50
30
40
0
10
20
30
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
T
J
= 150
o
C, R
G
= 10
, L = 100
μ
H
V
CE
= 480V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
500
400
300
200
100
0
10
20
30
40
V
CE
= 480V, V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 100
μ
H
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
= 480V, V
GE
= 15V
t
r
,
1
10
100
0
10
20
30
40
T
J
= 150
o
C, R
G
= 10
, L = 100
μ
H
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
1000
100
10
0
10
20
30
40
V
CE
= 480V, V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 100
μ
H
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
10
20
30
40
E
O
,
μ
J
1400
1000
0
V
CE
= 480V, V
GE
= 15V
1200
800
600
400
200
T
J
= 150
o
C, R
G
= 10
, L = 100
μ
H
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
2500
2000
1500
1000
500
0
0
10
20
30
40
V
CE
= 480V, V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 100
μ
H
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
相關(guān)PDF資料
PDF描述
HGT1S20N60C3R XC9536-7CS48C - NOT RECOMMENDED for NEW DESIGN
HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs
HGTP20N60C3R 40A, 600V, Rugged UFS Series N-Channel IGBTs
HGTG20N60C3R 40A, 600V, Rugged UFS Series N-Channel IGBTs
HGT1S20N60C3S 45A, 600V, UFS Series N-Channel IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG20N60B3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V40ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,40A,TO-247
HGTG20N60B3 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR
HGTG20N60B3_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HGTG20N60B3_Q 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG20N60B3D 功能描述:IGBT 晶體管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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