參數(shù)資料
型號(hào)： HGTG20N60B3
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 40A, 600V, UFS Series N-Channel IGBTs(40A, 600V，N溝道絕緣柵雙極晶體管)
中文描述： 40 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 138K
代理商： HGTG20N60B3
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGT1S20N60B3S
HGTP20N60B3
HGTG20N60B3
600
600
UNITS
V
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector to Gate Voltage, R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CGR
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
C
= 150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
40
20
160
±
20
±
30
A
A
A
V
V
30A at 600V
165
1.32
-40 to 150
W
W/
o
C
o
C
300
260
4
10
o
C
o
C
μ
s
μ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE
= 360V, T
C
= 125
o
C, R
G
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
CES
I
C
= 250
μ
A, V
GE
= 0V
V
CE
= BV
CES
600
-
-
V
μ
A
mA
Collector to Emitter Leakage Current
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
-
-
250
-
-
1.0
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
, V
GE
= 15V
-
1.8
2.0
V
-
2.1
2.5
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
GES
SSOA
I
C
= 250
μ
A, V
CE
= V
GE
V
GE
=
±
20V
T
C
= 150
o
C, V
GE
=
15V, R
G
= 10
,
L =
45
μ
H
I
C
= I
C110
, V
CE
= 0.5 BV
CES
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
T
C
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 100
μ
H
3.0
5.0
6.0
±
100
-
V
Gate to Emitter Leakage Current
-
-
nA
Switching SOA
V
CE
= 480V
V
CE
= 600V
100
-
A
30
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
Q
G(ON)
-
8.0
-
V
On-State Gate Charge
V
GE
= 15V
V
GE
= 20V
-
80
105
nC
-
105
135
nC
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
R
θ
JC
-
25
-
ns
Current Rise Time
-
20
-
ns
Current Turn-Off Delay Time
-
220
275
ns
Current Fall Time
-
140
175
ns
μ
J
μ
J
Turn-On Energy
-
475
-
Turn-Off Energy (Note 3)
-
1050
-
Thermal Resistance
-
-
0.76
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). The HGT1S20N60B3S, HGTP20N60B3 and HGTG20N60B3 were tested per
JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-
Off Energy Loss. Turn-On losses include diode losses.
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
相關(guān)PDF資料
PDF描述
HGT1S20N60C3R XC9536-7CS48C - NOT RECOMMENDED for NEW DESIGN
HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs
HGTP20N60C3R 40A, 600V, Rugged UFS Series N-Channel IGBTs
HGTG20N60C3R 40A, 600V, Rugged UFS Series N-Channel IGBTs
HGT1S20N60C3S 45A, 600V, UFS Series N-Channel IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG20N60B3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V40ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,40A,TO-247
HGTG20N60B3 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR
HGTG20N60B3_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HGTG20N60B3_Q 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG20N60B3D 功能描述:IGBT 晶體管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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