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參數(shù)資料
| 型號： | HGTG20N60A4D |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V,SMPS系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| 中文描述： | 70 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 351K |
| 代理商： | HGTG20N60A4D |
9
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ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
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Mercure Center
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Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
HGTG20N60A4D
TO-247
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
IGBT Packaging Table
LEAD 1
-
GATE
LEAD 2
-
COLLECTOR
LEAD 3
-
EMITTER
TERM. 4
-
COLLECTOR
A
b
b
1
b
2
c
D
E
L
L
1
R
1
2
e
1
3
1
J
1
S
Q
P
BACK VIEW
TERM. 4
3
e
2
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.180
0.190
4.58
4.82
-
b
0.046
0.051
1.17
1.29
2, 3
b
1
b
2
c
0.060
0.070
1.53
1.77
1, 2
0.095
0.105
2.42
2.66
1, 2
0.020
0.026
0.51
0.66
1, 2, 3
D
0.800
0.820
20.32
20.82
-
E
0.605
0.625
15.37
15.87
-
e
0.219 TYP
5.56 TYP
4
e
1
J
1
L
0.438 BSC
11.12 BSC
4
0.090
0.105
2.29
2.66
5
0.620
0.640
15.75
16.25
-
L
1
P
0.145
0.155
3.69
3.93
1
0.138
0.144
3.51
3.65
-
Q
0.210
0.220
5.34
5.58
-
R
0.195
0.205
4.96
5.20
-
S
0.260
0.270
6.61
6.85
-
NOTES:
1. Lead dimension and finish uncontrolled in L
1
.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Positionofleadtobemeasured0.250inches(6.35mm)frombottom
of dimension D.
5. Positionofleadtobemeasured0.100inches(2.54mm)frombottom
of dimension D.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
相關(guān)PDF資料 |
PDF描述 |
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| HGTG20N60B3D | 3.3V 36-mc CPLD |
| HGTG20N60C3D | 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(45A, 600V, UFS系列帶超快二極管的N溝道絕緣柵雙極型晶體管) |
| HGTG20N60C3D | 3.3V 36-mc CPLD |
| HGTG20N60C3 | 45A, 600V, UFS Series N-Channel IGBT(45A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGTG30N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V, SMPS系列 N溝道IGBT,帶反并行超快二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG20N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG20N60A4D_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG20N60B3 | 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG20N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V40ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,40A,TO-247 |
| HGTG20N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
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