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參數(shù)資料
| 型號： | HGTG20N60A4D |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V,SMPS系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| 中文描述： | 70 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 351K |
| 代理商： | HGTG20N60A4D |
6
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
0
20
40
60
80
100
0
1
3
4
5
2
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
9
1.7
10
12
1.8
2.0
1.9
11
13
14
15
16
2.1
2.2
V
C
,
I
CE
= 30A
I
CE
= 20A
I
CE
= 10A
DUTY CYCLE < 0.5%, T
J
= 25
o
C
PULSE DURATION = 250
μ
s
0.5
1.0
1.5
2.5
3.0
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
0
10
15
20
25
25
o
C
125
o
C
5
30
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%,
60
40
20
0
t
r
,
I
EC
, FORWARD CURRENT (A)
0
80
50
30
10
4
8
16
20
dI
EC
/dt = 200A/
μ
s
125
o
C t
rr
25
o
C t
b
25
o
C t
a
25
o
C t
rr
90
70
12
125
o
C t
a
125
o
C t
b
300
400
500
700
800
t
r
,
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
200
600
0
40
10
20
30
50
900
1000
I
EC
= 20A, V
CE
= 390V
125
o
C t
a
125
o
C t
b
25
o
C t
a
25
o
C t
b
600
400
200
0
200
Q
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
1000
500
300
400
900
800
600
700
800
25
o
C, I
EC
= 10A
125
o
C, I
EC
= 20A
125
o
C, I
EC
= 10A
25
o
C, I
EC
= 20A
V
CE
= 390V
HGTG20N60A4D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTG20N60B3D | 3.3V 36-mc CPLD |
| HGTG20N60C3D | 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(45A, 600V, UFS系列帶超快二極管的N溝道絕緣柵雙極型晶體管) |
| HGTG20N60C3D | 3.3V 36-mc CPLD |
| HGTG20N60C3 | 45A, 600V, UFS Series N-Channel IGBT(45A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGTG30N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V, SMPS系列 N溝道IGBT,帶反并行超快二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG20N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG20N60A4D_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG20N60B3 | 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG20N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V40ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,40A,TO-247 |
| HGTG20N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
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